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| MRF586 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 B OA 45 C DESCRIPTION: E OD The MRF586 is a High Frequency Transistor Designed for High Gain Low Noise CATV, and MATV Amplifier Applications. F G H MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC O O 200 mA 17 V 2.5 W @ TC = 50 C -65 C to +200 C -65 C to +200 C 70 C/W O O O O DIM A B C D E F G H MINIMUM inches / mm MAXIMUM inches / mm .200 / 5.080 .029 / 0.740 .028 / 0.720 .335 / 8.510 .305 / 7.750 .240 / 6.100 .500 / 12.700 .016 / 0.407 .020 / 0.508 .045 / 1.140 .034 / 0.860 .370 / 9.370 .335 / 8.500 .260 / 6.600 1 = EMITTER 2 = BASE 3 = COLLECTOR(CASE) NONE CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO hFE ft COB NF TB3 DIN GUmax TA = 25 C O TEST CONDITIONS IC = 5.0 mA IC = 1.0 mA IE = 100 A VCB = 10 V VCE = 5.0 V VCE = 15 V VCB = 10 V VCE = 15 V VCE = 15 V VCE = 15 V VCE = 15 V IC = 90 mA IC = 90 mA IC = 90 mA IC = 90 mA IC = 50 mA IC = 90 mA f = 500 MHz f = 1.0 MHz f = 300 MHz f = 500 MHz f = 500 MHz f = 500 MHz MINIMUM 17 34 2.5 TYPICAL MAXIMUM UNITS V V V 50 50 4500 2.2 3.0 -65 -120 14.5 200 A --MHz pF dB dB dBV dB A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 www..com |
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